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|Ultra High Accuracy EM||Copper interconnects with geometries of 32nm and smaller|
|High Accuracy EM||Copper and Aluminum inteconnects with geometries less than 90nm|
|Standard EM||Copper and Aluminum interconnects with gate lengths larger than 90nm|
|High Current EM||3-D architectures, including TSVs and Bump Technologies|
|Standard TDDB||Low-k dielectrics, barrier layers and 2-terminal gate oxide structures|
|High Voltage TDDB||Thick gate oxides and BTS testing of copper
backend dielectrics and barrier layers
|Extended Voltage TDDB||TDDB testing up to 200V|
|High Accuracy TDDB||Latest generations of high-k metal-gate, thin gate oxides and ILDs|
|Multi-terminal TDDB||Multi-terminal MOSFET structures|
|Advanced HCI||4-terminal MOSFET structures, thin gates, ultra thin gates, high-k metal gates and bipolar technology|
|High Voltage HCI||High voltage (up to 150V) HCI testing|