Copper Dielectric, Barrier and MIM Reliability (BTS) and 2-terminal Gate Oxide Reliability (CVTDDB/SILC)
The Model 1164 TDDB Application Modules test intra-level/inter-metal dielectrics (ILDs/IMDs), low-k dielectrics, barrier layers, metal-insulator-metal (MIM) capacitor structures and 2-terminal gate oxide structures, including thick gates, thin gates, ultra thin gates and high-k metal gate stacks.
The Model 1164 Test System Software includes the following test algorithms for TDDB and BTS testing:
- Constant Voltage Time Dependent Dielectric Breakdown (CVTDDB), also called Bias Temperature Stress (BTS) - monitor leakage current changes under elevated voltage and elevated temperature stress.
- Stress Induced Leakage Current (SILC) - periodically interrupt stress to characterize DUTs at low voltage (use condition). Characterization measurements include leakage at up to 3 use condition voltages and Ig-Vg characterization curves.