Copper, Aluminum and 3-D Interconnect Reliability (EM/SM)
The Model 1164 EM Application Modules test copper and aluminum interconnect structures, including lines, vias and thin film resistors. Testing of 3-D interconnect structures, including through-silicon vias (TSVs) and bump structures is also supported.
The Model 1164 Test System Software includes the following test algorithms for interconnect testing:
- Electromigration (EM) - monitor resistance changes under elevated current and elevated temperature stress. Optionally measure DUT temperature via TCR, thermal sensor or R vs. I characterization. Voltage extrusion and current leakage monitors are also available on some EM Application Modules.
- Stress Migration (SM) - monitor resistance changes under temperature stress.