MOS and Bipolar Transistor Reliability (HCI/BTI/VT/BTS/BiHCI)

The Model 1164 HCI Application Modules test Hot Carrier Injection (HCI), Bias Temperature Instability,  both Negative Bias Temperature Instability and Positive Bias Temperature Instability (BTI, NBTI, PBTI), Voltage Threshold Stability (VT) and Bias Temperature Stress (BTS). Test Modules are used to test 4-terminal MOSFET transistor structures, including those with thick gates, thin gates, ultra thin gates and high-k metal gate stacks.

The HCI/BTI/VT/BTS Application Software includes the following test algorithms for MOS transistor structure testing:

  • Apply elevated gate and/or drain voltage and/or elevated temperature stress, periodically interrupt stress to measure DUTs (parametric measurements and characterization curves) and monitor parametric degradation.
  • During stress, the system monitors Gate, Drain and Substrate currents.
  • During characterization, the system can measure:
    • Parametrics (all Forward and/or Reverse):
      • Vt (extrapolated, ASTM, FixedLin, FixedSat)
      • IdLin
      • IdSat
      • IdOff
      • RSat
      • Subthreshold Slope 1
      • Subthreshold Slope 2
      • gmMaxLin
      • gmMaxSat
      • Id@gmMaxLin
      • Id@gmMaxSat
      • gdLin
      • gdSat
      • IgMax
      • IsubMax
    • Characterization curves (all Forward and/or Reverse):
      • Id vs. Vgs at up to 5 Vds values
      • Id vs. Vds at up to 5 Vgs values
      • Ig vs. Vgs at up to 5 Vds values
      • Isub vs. Vgs at up to 5 Vds values
      • gmLin vs. Vgs
      • gmSat vs. Vgs
      • gd vs. Vds

The BiHCI Application Software includes the following test algorithms for bipolar transistor structure testing:

  • Apply elevated base and collector voltage stress and periodically interrupt stress to characterize DUTs (parametric measurements and characterization curves) and monitor parametric degradation (voltage stress only).
  • During stress, the system monitors Base, Collector and Substrate currents.
  • During characterization, the system can measure:
    • Parametrics:
      • ICO (automatic and fixed Vbe methods)
      • VBE
      • IB
      • BETA
      • gm
      • BetaMax
      • VEarly
    • Characterization curves:
      • Ib vs. Vbe
      • Ic vs. Vbe
      • gummel
      • Beta vs. Vbe
      • gm vs. Vbe
      • Ic vs. Vce at up to 5 Vbe values